Malvern, Pa.-based Vishay Intertechnology Inc. recently received a grant for its facility in Italy to work on a project for developing processes that can control the energy transferred to chips during fabrication.
“We’re proud to announce that our facility in Borgaro Torinese, Italy, has received a research results R&D grant from the European Union and the Regional Government of Piedmont for its Silicon Laser Annealing (SiLA) project,” the company tweeted on Aug. 3.
Specifically, the SiLA project is focused on the study and development of advanced low-temperature processes to locally and selectively control the energy transferred to chips during fabrication, according to Vishay Intertechnology, a global manufacturer of semiconductors — including diodes, MOSFETS and optoelectronics — and passive electronic components, such as resistors, inductors and capacitors.
In a statement released Wednesday, Vishay noted that the automotive market sector is continually increasing the efficiency of full-electric engines, which is driving the definition of new design rules for their electronic components.
“As a world leader in power semiconductors, Vishay’s goal is to meet the need for advanced 600 V to 1200 V diodes, IGBTs, and MOSFETs for electric vehicles and hybrid electric vehicles,” according to its statement.
Toward that goal, the company during its SiLA project work will apply thin wafer technology to its FRED Pt fast recovery diodes to improve their electric and thermal behavior, and guarantee efficiency improvements for energy conversion in battery chargers and motor controls for powertrains.
“This will allow for a further acceleration of new device adoption in the e-mobility market,” stated Vishay Intertechnology, a Fortune 1,000 Company listed on the NYSE.
Funding for the SiLA project grant was provided through the Regional Operational Program to support activities for developing new technologies alongside local partners’ R&D efforts, according to the company’s statement.